| PART |
Description |
Maker |
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| L-53CGCK |
The Green source color devices are made with InGaAlP on GaAs substrate Light Emitting Diode
|
Kingbright Electronic
KINGBRIGHT[Kingbright Corporation]
|
| AS179-92LF AS197-306 |
APN2015:GaAs FETs as Control Devices|DC-6 GHz Plastic Packaged and Chip|SPST
AS197-306:PHEMT GaAs IC High Power SP2T and SP3T S|DC-6 GHz Plastic Packaged and Chip|SPST AS197 - 306：PHEMT的砷化镓集成电路高功率SP2T和SP3T秒|的DC - 6GHz的塑料包装和芯片|聚苯乙烯
|
Amphenol, Corp.
|
| MBR2035CT-Y MBR2045CT-Y MBR2090CT-Y |
Discrete Devices -Diode-Schottky
|
Taiwan Semiconductor
|
| M521 |
Positive Voltage Control of GaAs MMIC Control Devices
|
M/A-COM Technology Solutions, Inc.
|
| 50HQ040 50HQ045 SD51 20FQ030 20FQ035 20FQ040 20FQ0 |
Schottky Rectifiers Single Chip Devices
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conductor P...
New Jersey Semi-Conduct...
|
| CFY35 Q62702-F1394 CFY35-20 CFY35-23 Q62702-F1393 |
From old datasheet system
GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters)
SCREWDRIVER, MULTI BLADE 7PCSCREWDRIVER, MULTI BLADE 7PC; Kit contents:7 Piece Set X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET
|
http://
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| TND301 MC100LVEP34 MC100EP016 MC100EP139 MC100EP16 |
Clock Management Design Using Low Skew and Low Jitter Devices
|
ONSEMI[ON Semiconductor]
|
| MBRF12035R MBRF12030 MBRF12030R MBRF12020R MBRF120 |
High Power Schottky Rectifiers - Full Pak Devices
|
America Semiconductor
|
| 1N6097R 1N6098R |
High Power Schottky Rectifiers - DO5 Stud Devices
|
America Semiconductor
|
| MBRF30035R MBRF30030 MBRF30030R MBRF30020R MBRF300 |
High Power Schottky Rectifiers - Full Pak Devices
|
America Semiconductor
|
| MMSD301T1 ON2245 MMSD701T1 |
From old datasheet system
Motorola Preferred Devices
SOD-123 Schottky Barrier Diodes
|
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
ON Semi
|
